Electromigration-induced formation of percolating adsorbate islands during condensation from the gaseous phase: a computational study

• Alina V. Dvornichenko,
• Vasyl O. Kharchenko and
• Dmitrii O. Kharchenko

Beilstein J. Nanotechnol. 2021, 12, 694–703, doi:10.3762/bjnano.12.55

• dynamics of the evolution of surface morphology at elevated temperatures. This effect can lead to a change in the morphology of the surface compared to the isotropic case of deposition without the presence of an external field. Mathematical and numerical modeling of nanostructured thin film growth

Protruding hydrogen atoms as markers for the molecular orientation of a metallocene

• Linda Laflör,
• Michael Reichling and
• Philipp Rahe

Beilstein J. Nanotechnol. 2020, 11, 1432–1438, doi:10.3762/bjnano.11.127

• details on the thin film growth and properties can be found in [22][26][27][28]. Deposition of 1,1’-ferrocene dicarboxylic acid (purity 98%, Alfa Aesar, Kandel, Germany) on samples held at room temperature was accomplished by sublimation from custom-built Knudsen cells heated to about 390 K. For bulk

Impact of fluorination on interface energetics and growth of pentacene on Ag(111)

• Qi Wang,
• Meng-Ting Chen,
• Antoni Franco-Cañellas,
• Bin Shen,
• Thomas Geiger,
• Holger F. Bettinger,
• Frank Schreiber,
• Ingo Salzmann,
• Alexander Gerlach and
• Steffen Duhm

Beilstein J. Nanotechnol. 2020, 11, 1361–1370, doi:10.3762/bjnano.11.120

• multilayers on Ag(111). Our results highlight that even for weak organic–metal interaction, the fluorine substitution significantly affects the organic thin film growth beyond the first layer as well as the multilayer electronic structure. Experimental F4PEN was synthesized following an established procedure

Combined pulsed laser deposition and non-contact atomic force microscopy system for studies of insulator metal oxide thin films

• Daiki Katsube,
• Hayato Yamashita,
• Satoshi Abo and
• Masayuki Abe

Beilstein J. Nanotechnol. 2018, 9, 686–692, doi:10.3762/bjnano.9.63

• -doped SrTiO3(100) (dopant level 0.05 wt %) and non-doped LaAlO3(100) for (a) and (c), respectively. Parameters used for thin-film growth of the anatase TiO2(001) were Ts = 800 °C, PO ≈ 1 × 10−4 Pa, I = 0.8 J/cm2, fp = 2 Hz. For LaAlO3(100) thin film growth, the parameters were Ts = 900 °C, PO ≈ 1 × 10−3

Application of visible-light photosensitization to form alkyl-radical-derived thin films on gold

• Rashanique D. Quarels,
• Xianglin Zhai,
• Neepa Kuruppu,
• Jenny K. Hedlund,
• Ashley A. Ellsworth,
• Amy V. Walker,
• Jayne C. Garno and
• Justin R. Ragains

Beilstein J. Nanotechnol. 2017, 8, 1863–1877, doi:10.3762/bjnano.8.187

• , arenediazonium salts are workhorses for the growth of aryl radical-derived thin films with broad applications. In stark contrast, alkyl radical-derived thin film growth has received much less attention but is attractive given the broad utility of alkyl and alkyl-containing films [3][4][5][21][22][23][24][25][26

• of the precursor (in the case of alkyl halides) [29][30][31][32]. We envisioned an alternative approach to alkyl radical-derived thin film growth that occurs under mildly reducing conditions and does not suffer from moisture sensitivity. This involves phthalimide esters (6, Equation 2, Scheme 1

• deposited on Au using the respective phthalimide esters. To accomplish thin film growth, Au(111) surfaces masked with mesospheres were immersed in solutions of phthalimide ester, benzyl nicotinamide, and the photosensitizer Ru(bpy)3Cl2 in CH3CN and irradiated for 30 min before rinsing/ultrasonication

Triptycene-terminated thiolate and selenolate monolayers on Au(111)

• Jinxuan Liu,
• Martin Kind,
• Björn Schüpbach,
• Daniel Käfer,
• Stefanie Winkler,
• Wenhua Zhang,
• Andreas Terfort and
• Christof Wöll

Beilstein J. Nanotechnol. 2017, 8, 892–905, doi:10.3762/bjnano.8.91

• reported, e.g., in electrochemistry [1][2], molecular electronics [1][2] and biocompatibility [1][2], to name only a few. Particularly interesting is the use of SAMs as templates for crystallographically oriented metal–organic framework (MOF) thin film growth [3]. The by far most intensely studied SAM

Surface-enhanced infrared absorption studies towards a new optical biosensor

• Lothar Leidner,
• Julia Stäb,
• Jennifer T. Adam and
• Günter Gauglitz

Beilstein J. Nanotechnol. 2016, 7, 1736–1742, doi:10.3762/bjnano.7.166

• chemical and a biological sensor by measuring the optical thickness change of a sensitive layer. The idea behind this concept is monitoring thin film growth by evaluation of the corresponding interference spectrum of a white light source. When the film is illuminated by a white light source, assuming

Chemical bath deposition of textured and compact zinc oxide thin films on vinyl-terminated polystyrene brushes

• Nina J. Blumenstein,
• Caroline G. Hofmeister,
• Peter Lindemann,
• Cheng Huang,
• Johannes Baier,
• Andreas Leineweber,
• Stefan Walheim,
• Christof Wöll,
• Thomas Schimmel and
• Joachim Bill

Beilstein J. Nanotechnol. 2016, 7, 102–110, doi:10.3762/bjnano.7.12

• ; thin film growth; zinc oxide; Introduction Due to its promising properties like photoemission in the UV range and its high piezoelectric coefficient, zinc oxide (ZnO; space group P63mc) is interesting for a wide range of applications. Several research groups investigate its application in light

Organic and inorganic–organic thin film structures by molecular layer deposition: A review

• Pia Sundberg and
• Maarit Karppinen

Beilstein J. Nanotechnol. 2014, 5, 1104–1136, doi:10.3762/bjnano.5.123

• than the calculated chain length) to 6 Å per cycle, whereas Lee et al. [39] reported a growth rate of only 1.3 Å per cycle at 125 °C. Both groups reported that the TMA+GLY thin film growth is sensitive to reaction conditions. As the paper by Lee et al. [39] was the one published a little later, they

Atomic layer deposition, a unique method for the preparation of energy conversion devices

• Julien Bachmann

Beilstein J. Nanotechnol. 2014, 5, 245–248, doi:10.3762/bjnano.5.26

• achieves a thin film growth by using well-defined surface chemistry. Two (or more) complementary, quantitative surface reactions performed subsequently and repeated in an alternating manner result in the deposition of a solid in a layer-by-layer fashion [8][9][10]. The surface chemistry is ‘self-limiting

Probing three-dimensional surface force fields with atomic resolution: Measurement strategies, limitations, and artifact reduction

• Mehmet Z. Baykara,
• Omur E. Dagdeviren,
• Todd C. Schwendemann,
• Harry Mönig,
• Eric I. Altman and
• Udo D. Schwarz

Beilstein J. Nanotechnol. 2012, 3, 637–650, doi:10.3762/bjnano.3.73

• fields, including catalysis, thin-film growth, nanoscale device fabrication, and tribology, among others [1]. Shortly after the first atomic-resolution images of surfaces were obtained by noncontact atomic force microscopy (NC-AFM) [2][3], the method of dynamic force spectroscopy (DFS) was introduced

Focused electron beam induced deposition: A perspective

• Michael Huth,
• Fabrizio Porrati,
• Christian Schwalb,
• Marcel Winhold,
• Roland Sachser,
• Maja Dukic,
• Jonathan Adams and
• Georg Fantner

Beilstein J. Nanotechnol. 2012, 3, 597–619, doi:10.3762/bjnano.3.70

• , carbonaceous matrix. In DLC thin-film growth, which is mostly done by reactive sputtering in a mixed Ar and acetylene gas atmosphere from a metallic target, analogous observations are made with regard to the microstructure depending on the miscibility of the target metal with carbon. The granular

Imaging ultra thin layers with helium ion microscopy: Utilizing the channeling contrast mechanism

• Gregor Hlawacek,
• Vasilisa Veligura,
• Stefan Lorbek,
• Tijs F. Mocking,
• Antony George,
• Raoul van Gastel,
• Harold J. W. Zandvliet and
• Bene Poelsema

Beilstein J. Nanotechnol. 2012, 3, 507–512, doi:10.3762/bjnano.3.58

• MS and PFS, respectively. para-Sexiphenyl (6P) thin films were grown on Si{001} wafers covered by a native oxide in an UHV system with a base pressure of 1 × 10−10 mbar. Prior to thin-film growth the substrate was flashed to 500 °C. 6P was deposited at room temperature from a Knudsen cell [8][9]. For